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Proceedings Paper

Influence of low energy H- ion implantation on the electrical and material properties of quaternary alloy (In0.21Al0.21Ga0.58As) capped InAs/GaAs n-i-n QDIPs
Author(s): A. Mandal; H. Ghadi; K. L. Mathur; A. Basu; N. B. V. Subrahmanyam; P. Singh; S. Chakrabarti
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Paper Abstract

The effect of low energy H ions implantation on the InAs/GaAs quantum dot infrared photodetectors had been studied. Light ion implantation was found to be an effective post growth technique which helped dark current density suppression by four orders in the implanted devices. In this study we had mainly concentrated on determining how the defect-related material and structural changes had an impact on dark current density reduction for InAs/GaAs quantum dot infrared photodetectors.

Paper Details

Date Published: 29 March 2013
PDF: 6 pages
Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 86340A (29 March 2013); doi: 10.1117/12.2001805
Show Author Affiliations
A. Mandal, Indian Institute of Technology Bombay (India)
H. Ghadi, Indian Institute of Technology Bombay (India)
K. L. Mathur, Sardar Vallabhbhai National Institute of Technology (India)
A. Basu, Bhabha Atomic Research Ctr. (India)
N. B. V. Subrahmanyam, Bhabha Atomic Research Ctr. (India)
P. Singh, Bhabha Atomic Research Ctr. (India)
S. Chakrabarti, Indian Institute of Technology Bombay (India)


Published in SPIE Proceedings Vol. 8634:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X
Kurt G. Eyink; Diana L. Huffaker; Frank Szmulowicz, Editor(s)

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