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Proceedings Paper

Optimizing the multiple quantum well thickness of an InGaN blue light emitting diode
Author(s): Bing Xu; Jun Liang Zhao; Shu Guo Wang; Hai Tao Dai; Sheng-Fu Yu; Ray-Ming Lin; Fu-Chuan Chu; Chou-Hsiung Huang; Xiao Wei Sun
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Paper Abstract

InGaN/GaN blue light emitting diodes with varied quantum well thickness from 2.4 nm to 3.6 nm are fabricated and characterized by atmosphere pressure metalorganic chemical vapor deposition (AP-MOCVD). Experimental results show that the exciton localization effect is enhanced from 21.76 to 23.48 by increasing the quantum well thickness from 2.4 nm to 2.7 nm. However, with the further increase of quantum well thickness, the exciton localization effect becomes weaker. Meanwhile, the peak wavelength of electroluminescence redshift with the increase of well thickness due to the larger quantum confined Stark effect (QCSE). In addition, the efficiency droop can be improved by increasing the well thickness.

Paper Details

Date Published: 4 March 2013
PDF: 7 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 864103 (4 March 2013); doi: 10.1117/12.2001788
Show Author Affiliations
Bing Xu, Tianjin Univ. (China)
Chang Gung Univ. (China)
Jun Liang Zhao, Tianjin Univ. (China)
Shu Guo Wang, Tianjin Univ. (China)
Hai Tao Dai, Tianjin Univ. (China)
Sheng-Fu Yu, National Cheng Kung Univ. (Taiwan)
Ray-Ming Lin, Chang Gung Univ. (Taiwan)
Fu-Chuan Chu, Chang Gung Univ. (Taiwan)
Chou-Hsiung Huang, Chang Gung Univ. (Taiwan)
Xiao Wei Sun, South Univ. of Science and Technology of China (China)

Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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