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Proceedings Paper

Wavelength dependent vertical integration of nanoplasmonic circuits utilizing coupled ring resonators
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Paper Abstract

To become a competitor to replace CMOS-electronics for next-generation data processing, signal routing, and computing, nanoplasmonic circuits will require an analogue to electrical vias in order to enable vertical connections between device layers. Vertically stacked nanoplasmonic nanoring resonators formed of Ag/Si/Ag gap plasmon waveguides were studied as a novel 3-D coupling scheme that could be monolithically integrated on a silicon platform. The vertically coupled ring resonators were evanescently coupled to 100 nm x 100 nm Ag/Si/Ag input and output waveguides and the whole device was submerged in silicon dioxide. 3-D finite difference time domain simulations were used to examine the transmission spectra of the coupling device with varying device sizes and orientations. By having the signal coupling occur over multiple trips around the resonator, coupling efficiencies as high as 39% at telecommunication wavelengths between adjacent layers were present with planar device areas of only 1.00 μm2. As the vertical signal transfer was based on coupled ring resonators, the signal transfer was inherently wavelength dependent. Changing the device size by varying the radii of the nanorings allowed for tailoring the coupled frequency spectra. The plasmonic resonator based coupling scheme was found to have quality (Q) factors of upwards of 30 at telecommunication wavelengths. By allowing different device layers to operate on different wavelengths, this coupling scheme could to lead to parallel processing in stacked independent device layers.

Paper Details

Date Published: 6 March 2013
PDF: 6 pages
Proc. SPIE 8627, Integrated Optics: Devices, Materials, and Technologies XVII, 86270P (6 March 2013); doi: 10.1117/12.2001574
Show Author Affiliations
M. Nielsen, Univ. of Alberta (Canada)
A. Y. Elezzabi, Univ. of Alberta (Canada)

Published in SPIE Proceedings Vol. 8627:
Integrated Optics: Devices, Materials, and Technologies XVII
Jean Emmanuel Broquin; Gualtiero Nunzi Conti, Editor(s)

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