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Proceedings Paper

Characterization of an SiPM dedicated at analytical, life science, and medical imaging
Author(s): Philippe Bérard; Martin Couture; Frédéric Laforce; Bernicy Fong; Henri Dautet
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Paper Abstract

Silicon photomultipliers with high photon detection efficiency in the 350 to 800 nm range and low dark count rate are currently being developed in a variety of geometry, microcell size and area in order to address the needs of the analytical, life science, medical imaging community as well as for various scientific and technological applications. This SiPM development platform is based on previous knowledge of low dark count avalanche photodiode operated in Geiger-mode found in the Excelitas single photon counting module. Low dark counts and low temperature sensitivity are especially important when tiling up SiPMs to form larger area detectors such as block detectors typically used in positron emission tomography. The latest developments include; 1. Optical trenches to suppress crosstalk which allowed to increase the operating voltage range from 5 to 10 V above breakdown, 2. Tailored parasitic capacitance to obtain single photon timing resolution close to 200 ps FWHM and 3. Improved PDE at shorter wavelengths by optimizing the entrance window. A corrected energy resolution of 12.0 % was typically obtained at 511 keV which, alongside the good timing resolution, makes this SiPM a perfect candidate for time-of-flight PET and other application requiring a timing resolution better than 200 ps.

Paper Details

Date Published: 11 March 2013
PDF: 10 pages
Proc. SPIE 8621, Optical Components and Materials X, 86211D (11 March 2013); doi: 10.1117/12.2001520
Show Author Affiliations
Philippe Bérard, Excelitas Technologies (Canada)
Martin Couture, Excelitas Technologies (Canada)
Frédéric Laforce, Excelitas Technologies (Canada)
Bernicy Fong, Excelitas Technologies (Canada)
Henri Dautet, Excelitas Technologies (Canada)

Published in SPIE Proceedings Vol. 8621:
Optical Components and Materials X
Michel J. F. Digonnet; Shibin Jiang; J. Christopher Dries, Editor(s)

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