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Proceedings Paper

Laser direct writing of graphene patterns on SiO2/Si substrates
Author(s): Lisha Fan; Wei Xiong; Yang Gao; Jongbok Park; Yunshen Zhou; Lan Jiang; Yongfeng Lu
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Paper Abstract

Direct fabrication of graphene patterns on SiO2/Si substrates was demonstrated using a single-step laser-induced chemical vapor deposition (LCVD) process. A laser beam was used to irradiate a nickel-coated SiO2/Si substrate in a methane-hydrogen environment to induce a local temperature rise on the laser focused area. Followed by a rapid cooling process by moving the laser beam, graphene patterns were formed on the laser scanning pathway. Nickel (Ni) layer under graphene patterns was removed by the Ni etchant diffused into the area under the graphene. Laser direct writing graphene patterns on SiO2/Si substrates was achieved. Energy dispersive X-ray diffraction spectroscopy was used to confirm the removal of Ni layers. The discovery and development of the LCVD growth process provide a route for the rapid fabrication of graphene-based electronic devices.

Paper Details

Date Published: 15 March 2013
PDF: 6 pages
Proc. SPIE 8608, Laser-based Micro- and Nanopackaging and Assembly VII, 86080J (15 March 2013); doi: 10.1117/12.2001405
Show Author Affiliations
Lisha Fan, Univ. of Nebraska-Lincoln (United States)
Wei Xiong, Univ. of Nebraska-Lincoln (United States)
Yang Gao, Univ. of Nebraska-Lincoln (United States)
Jongbok Park, Univ. of California, Berkeley (United States)
Yunshen Zhou, Univ. of Nebraska-Lincoln (United States)
Lan Jiang, Beijing Institute of Technology (China)
Yongfeng Lu, Univ. of Nebraska-Lincoln (United States)

Published in SPIE Proceedings Vol. 8608:
Laser-based Micro- and Nanopackaging and Assembly VII
Udo Klotzbach; Yongfeng Lu; Kunihiko Washio, Editor(s)

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