Share Email Print

Proceedings Paper

Model for thickness dependence of mobility and concentration in highly conductive ZnO
Author(s): D. C. Look; K. D. Leedy; A. Kiefer; B. Claflin; N. Itagaki; K. Matsushima; I. Suhariadi
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The dependences of the 294-K and 10-K mobility μ and volume carrier concentration n on thickness (d = 25 – 147 nm) were examined in Al-doped ZnO (AZO) layers grown in Ar ambient at 200 °C on quartz-glass substrates. Two AZO layers were grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer grown at 300 °C in Ar/N2 ambient. Plots of the 10-K sheet concentration ns vs d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n = 8.36 x 1020 and 8.32 x 1020 cm-3, but different x-axis intercepts, δd = -4 and +13 nm, respectively. Thus, the electrical thicknesses are d - δd = d + 4 and d - 13 nm, respectively. Plots of ns vs d at 294 K produced substantially the same results. Plots of μ vs d can be well fitted with the equation μ(d) = μ(infinity symbol)/[1 + d*/(d-δd)], where d* is the thickness for which μ(infinity symbol) is reduced by a factor 2. For the B and UB samples, d* = 7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(infinity symbol) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23 x 1021 cm-3 and 1.95 x 1020 cm-3, respectively, and Drude theory to predict a plasmonic resonance at1.34 μm. The latter is confirmed by reflectance measurements.

Paper Details

Date Published: 18 March 2013
PDF: 9 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862602 (18 March 2013); doi: 10.1117/12.2001287
Show Author Affiliations
D. C. Look, Wright State Univ. (United States)
Wyle Labs. (United States)
Air Force Research Lab. (United States)
K. D. Leedy, Air Force Research Lab. (United States)
A. Kiefer, Air Force Research Lab. (United States)
B. Claflin, Air Force Research Lab. (United States)
N. Itagaki, Kyushu Univ. (Japan)
K. Matsushima, Kyushu Univ. (Japan)
I. Suhariadi, Kyushu Univ. (Japan)

Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

© SPIE. Terms of Use
Back to Top