Europium doping barium thioaluminates thin films are sputtered by Al complex target embedded with BaS:Eu pellets sintered by spark plasma sintering (SPS). Thin films are deposited by RF-sputtering with complex target. BaAl₂S₄ is found in each thin film sample while BaAl₄S₇ appears in the samples only if the amount of BaS:Eu pellets is more than 3. Oxidizing products are BaAl₂O_4, BaSO₄ and Al₂O₃. The amounts of barium thioaluminates including BaAl₂S₄ and BaAl₄S₇ will increase while the one of Al₂O₃ and BaS decrease if more BaS:Eu pellets are embedded in the target during sputtering. Elements analysis is carried out by EDS. The Al/Ba ratio in thin films will approach 2.0 with more pellets existing in target. PL spectra of thin films are measured and analyzed. The most obvious emission peak in each spectrum is located at about 470nm which corresponds to the 4f⁶5d¹→4f⁷ transition of Eu2+ in BaAl₂S₄ lattice. The emission peak will approach 470nm as more pellets are embedded in complex target. As a result, it can be concluded that increasing the amounts of BaS:Eu pellets in complex target is an efficient way to achieve better Eu doping barium thioaluminates thin film.

Date Published: 27 November 2012
PDF: 9 pages
Proc. SPIE 8560, LED and Display Technologies II, 85600H (27 November 2012); doi: 10.1117/12.2001136

Published in SPIE Proceedings Vol. 8560:
LED and Display Technologies II
Yanbing Hou; Bin Hu, Editor(s)