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Proceedings Paper

Photoelectric response performance of nano-graphene film over infrared substrates
Author(s): Jinhui Gong; Xinyu Zhang; Furi Lin; An Ji; Changsheng Xie; Tianxu Zhang
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Paper Abstract

In this paper, we demonstrate the fabrication and measurement of the special nano-graphene-detectors for infrared (IR) radiation. We first transfer the graphene film with a thickness in nanometer scale onto different infrared wafer including Ge, GaAs, Si, and SiO2. The graphene microstructures consist of the transferred graphene film over IR wafer and metal electrodes fabricated over graphene sheet utilized. Because of the special band structure, the fabricated graphene microstructures can generate a large number of electron-hole pairs in a relatively broad wavelength range including ultraviolet (UV), visible, IR, and THz wavelength. In our studies, the current-voltage relationship of the graphene microstructure fabricated, which means that certain direct voltage is applied over two metal electrodes fabricated, is measured before and after illumination graphene microstructure by IR lasers. As tested, the graphene microstructures demonstrate a high optical transmittance in several typical wavelength range mentioned above. We also research the current-voltage performance of the graphene microstructure. The typical result is as follows: when the graphene microstructure is illuminated by the laser beam of 1.1μm wavelength and 0.9W power, an inflection point and remarkable current gain can be discovered. Because of the low light absorption of graphene film, the photocurrent of the graphene microstructure is limited in about 1~3mA/W under certain voltage applied. We believe that the nanometer graphene film and semiconductor materials connected directly with graphene film already forms a kind of special energy band gap, which affect the photocurrent generation.

Paper Details

Date Published: 27 November 2012
PDF: 6 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551U (27 November 2012); doi: 10.1117/12.2000621
Show Author Affiliations
Jinhui Gong, Huazhong Univ. of Science and Technology (China)
Xinyu Zhang, Huazhong Univ. of Science and Technology (China)
Furi Lin, Huazhong Univ. of Science and Technology (China)
An Ji, Institute of Semiconductors (China)
Changsheng Xie, Huazhong Univ. of Science and Technology (China)
Tianxu Zhang, Huazhong Univ. of Science and Technology (China)

Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)

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