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Proceedings Paper

Supralinear photoconductivity of copper-doped gallium arsenide
Author(s): Karl H. Schoenbach; Ravindra P. Joshi; Frank E. Peterkin
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Paper Abstract

We report on the intensity dependent supralinear photoconductivity in GaAs:Si:Cu material. The results of our measurements show that the effective carrier lifetime can change over two orders of magnitude with variations in the intensity of the optical excitation. Numerical simulations have also been carried out to analyze the effect. The intensity dependent lifetimes obtained from the simulations match the experiments very well. Such a nonlinear intensity dependence could have possible low-energy phototransistor applications.

Paper Details

Date Published: 4 January 1995
PDF: 10 pages
Proc. SPIE 2343, Optically Activated Switching IV, (4 January 1995); doi: 10.1117/12.198667
Show Author Affiliations
Karl H. Schoenbach, Old Dominion Univ. (United States)
Ravindra P. Joshi, Old Dominion Univ. (United States)
Frank E. Peterkin, Old Dominion Univ. (United States)

Published in SPIE Proceedings Vol. 2343:
Optically Activated Switching IV
William R. Donaldson, Editor(s)

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