Gas-source molecular beam epitaxy (GSMBE) was applied for the growth of ZnMgSSe layers and quantum well (QW) structures. The source materials were elemental Zn and Se, as well as gas sources of bis- methylcyclopentadienyl-magnesium ((MeCp)₂Mg) and H₂S. Mg and S compositions were well controlled by the flow rate of (MeCp)₂Mg and H₂S, respectively. ZnSe/ZnMgSSe QWs with abrupt heterointerface have successfully been grown on [100]-oriented GaAs substrates under in-situ monitoring of specular beam intensity oscillation in reflection high energy electron diffraction (RHEED). Photoluminescence (PL) at 4.2 K revealed sharp and intense emission from single QWs, which is attributed to n equals 1 heavy-hole free exciton. The photopumped lasing of a double heterostructure was achieved at room temperature with low threshold excitation intensity (110 kW/cm²), suggesting formation of well-defined heterostructures and promising potential of GSMBE for device applications.

Date Published: 21 December 1994
PDF: 8 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197261

Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)