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Proceedings Paper

Preferential donor-acceptor pairing in heavily N-doped ZnSe?
Author(s): Gertrude F. Neumark; Leon Radomsky; Igor L. Kuskovskiy
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Paper Abstract

It has been shown in the literature that heavy N-doping of ZnSe leads to the introduction of deep donors, which are evidenced by new luminescence bands, deeper than the 'standard' donor-acceptor pair band. We suggest, based on reported shifts of the peaks, with excitation intensity, of the new bands, as well as on differences in their position among different samples, that these bands may involve 'strong' preferential pairing between the deep donors and the N acceptors. This type of pairing would indicate a high ion mobility of the deep donors. We have calculated the peak shifts, as a function of excitation intensity, for various reasonable parameter values. Based on these results, we conclude that strong preferential pairing cannot, at this time, be proven, but is nevertheless strongly indicated. We suggest that a proof should be possible by studying the intensity dependence over a wider range.

Paper Details

Date Published: 21 December 1994
PDF: 11 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197256
Show Author Affiliations
Gertrude F. Neumark, Columbia Univ. (United States)
Leon Radomsky, Columbia Univ. (United States)
Igor L. Kuskovskiy, Columbia Univ. (United States)

Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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