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Proceedings Paper

Modeling of optical gain in ZnCdSe/ZnMgSSe quantum well lasers
Author(s): Wenli Huang; Faquir C. Jain
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Paper Abstract

A model to calculate the optical gain due to excitonic transitions is developed and used to calculate unstrained as well as strained ZnCdSe/ZnMgSSe multiple quantum well (MQW) lasers. Strain induced changes in energy band gap and effective masses of light and heavy holes are included in the gain coefficient and threshold current density calculations. The theoretical simulations are matched with the experimental data on compressively strained ZnCdSe-ZnSSe devices grown on GaAs substrates. Our calculations predict lower threshold current density for the tensile strained Zn.8Cd.2Se-Zn.2Mg.8S.03Se.97 quantum well lasers grown on InP substrates. Unlike the III-V strained layer quantum well lasers, the contribution to gain coefficient due to excitonic transitions is predominant in II-VI systems as the exciton binding energy is larger by a factor of 5. This results in a primary role for excitons in lasing, which has been verified experimentally.

Paper Details

Date Published: 21 December 1994
PDF: 10 pages
Proc. SPIE 2346, II-VI Blue/Green Laser Diodes, (21 December 1994); doi: 10.1117/12.197253
Show Author Affiliations
Wenli Huang, Univ. of Connecticut (United States)
Faquir C. Jain, Univ. of Connecticut (United States)

Published in SPIE Proceedings Vol. 2346:
II-VI Blue/Green Laser Diodes
Robert L. Gunshor; Arto V. Nurmikko, Editor(s)

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