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Proceedings Paper

Charge transfer efficiency measurements at low signal levels on STIS/SOHO TK1024 CCDs
Author(s): Jeffrey D. Orbock; Debbie Murata-Seawalt; Alan W. Delamere; Morley M. Blouke
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Paper Abstract

Charge transfer efficiency (CTE) test methods are reviewed, and the results and conclusions of the tests are given. The test methods have been utilized to describe the CTE characteristics of the Tektronix 1024 by 1024 CCD to optimize low dark current, low readout noise, and high CTE at low signal levels. CTE modelling is described, and three test methods are set forth and compared. The Fe-55 X-ray response method utilizes the response of a CCD to X-ray photons from the radioactive source Fe-55. The extended pixel edge response method employs the measurement of the charge lost to successive pixels by a known initial signal as it is shifted through the array. The charge injection method consists of charge injection through the output amplifier reset transistor. These measurements were performed on several devices with known CTEs. The CTEs are found to be in agreement for the three methods, making application and test requirements the principal criteria for their use.

Paper Details

Date Published: 1 July 1990
PDF: 12 pages
Proc. SPIE 1242, Charge-Coupled Devices and Solid State Optical Sensors, (1 July 1990); doi: 10.1117/12.19459
Show Author Affiliations
Jeffrey D. Orbock, Ball Aerospace Systems Group (United States)
Debbie Murata-Seawalt, Ball Aerospace Systems Group (United States)
Alan W. Delamere, Ball Aerospace Systems Group (United States)
Morley M. Blouke, Tektronix Inc. (United States)

Published in SPIE Proceedings Vol. 1242:
Charge-Coupled Devices and Solid State Optical Sensors
Morley M. Blouke, Editor(s)

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