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Proceedings Paper

Millimeter-wave power HEMT technology
Author(s): Huan-Chun Yen; K. L. Tan; Richard Lai; C. H. Chen; Mike Biedenbender; Dwight C. Streit; Michael Wojtowicz
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Paper Abstract

Recent improvements in material structure, device layout, fabrication process, and device matching have resulted in simultaneous improvements in power output, power gain, and power-added efficiency from large size GaAs-based pseudomorphic AlGaAs/hiGaAs HEMTs at millimeter-wave frequencies. Consequently efficient watt level building blocks are now available to build solid state power amplifiers capable of 1 to 20 watt power output for next generation military and civilian systems. This paper describes a state-of-the-art 0.15 pm power HEMT technology suitable for applications in this frequency range. Examples of MIC and MMIC power amplifier circuits are given to illustrate the achievable power performance. Preliminary study of the power HEMT reliability is also discussed.

Paper Details

Date Published: 14 December 1994
PDF: 14 pages
Proc. SPIE 10276, Millimeter and Microwave Engineering for Communications and Radar: A Critical Review, 1027607 (14 December 1994); doi: 10.1117/12.194301
Show Author Affiliations
Huan-Chun Yen, TRW, Inc. (United States)
K. L. Tan, TRW, Inc. (United States)
Richard Lai, TRW, Inc. (United States)
C. H. Chen, TRW, Inc. (United States)
Mike Biedenbender, TRW, Inc. (United States)
Dwight C. Streit, TRW, Inc. (United States)
Michael Wojtowicz, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 10276:
Millimeter and Microwave Engineering for Communications and Radar: A Critical Review
James C. Wiltse, Editor(s)

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