Proceedings Paper
Deposition and characterization of a-SiC:H thin films| Format | Member Price | Non-Member Price |
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Paper Abstract
The optical and structural properties of a-SiC:H thin films, deposited by PECVD by using different carbon sources: SiH4 + CH4 and SiH4 + C2H2 gas mixtures, have been characterized by transmittance-reflectance spectroscopy in the range of wavelength 300 - 2000 nm and by IR spectroscopy in the range 400 - 4000 cm-1. By knowing the elemental composition, the results on the physical properties of the films are examined and compared.
Paper Details
Date Published: 4 November 1994
PDF: 12 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192131
Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings
Florin Abeles, Editor(s)
PDF: 12 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192131
Show Author Affiliations
Francesca Demichelis, Politecnico di Torino (Italy)
C. F. Pirri, Politecnico di Torino (Italy)
E. Tresso, Politecnico di Torino (Italy)
C. F. Pirri, Politecnico di Torino (Italy)
E. Tresso, Politecnico di Torino (Italy)
F. Valente, Politecnico di Torino (Italy)
E. Bolzan, INFM di Padova (Italy)
Valentino Rigato, INFM di Padova (Italy)
E. Bolzan, INFM di Padova (Italy)
Valentino Rigato, INFM di Padova (Italy)
Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings
Florin Abeles, Editor(s)
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