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Proceedings Paper

Optical properties of Si3N4 films produced by reactive d.c.-magnetron sputtering
Author(s): Eduard P. Rille; Michael Huter
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Paper Abstract

Thin films of Si3N4 with thicknesses between 50 nm and 600 nm were deposited on different substrates by reactive d.c.-magnetron sputtering. All films proved to be stoichiometric by Rutherford Back Scattering and only small amounts of oxygen and water in the film's bulk were detected by IR absorption measurements. The refractive index of the films was calculated from optical transmission data. Increasing both the working gas (Argon) flow and the reactive gas (Nitrogen) flow resulted in a decrease of the refractive index of the thin films. This is due to the lower density of the thin films prepared at either higher working gas flow or higher total gas pressure. At a wavelength of 633 nm the refractive index ranged between 1.86 and 2.01. All films shows an amorphous microstructure. The Si3N4 deposition rate on the substrates was found to be linear depend on the d.c. sputtering power from 0.6 kW up to 2.2 kW. The fundamental absorption edge shifted to higher energy values by increasing the reactive gas flow. The 10% transmission value was found at a wavelength of 233 nm (5.33 eV) with the N2 flow at 50 sccm and at 213 nm (5.83 eV) with the N2 flow at 200 sccm.

Paper Details

Date Published: 4 November 1994
PDF: 5 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192075
Show Author Affiliations
Eduard P. Rille, Univ. of Innsbruck (Austria)
Leica AG (Switzerland)
Michael Huter, Univ. of Innsbruck (Austria)

Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings
Florin Abeles, Editor(s)

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