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Proceedings Paper

Growth of low and high refractive index dielectric films: an in situ ellipsometry study
Author(s): Josette Rivory; S. Fisson; Jean Marc Frigerio; V. Nguyen Van; G. Vuye; Yangshu Wang; Florin Abeles
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Paper Abstract

Dielectric films exhibit very different and complex behaviors during thickness growth, leading generally to a variation of the refractive index in the depth of the film. Several causes of index inhomogeneity are examined: chemical interaction between film and substrate, transition layer, surface layer, etc. Their detection from in situ ellipsometric measurements is presented in the case of CaF2, SiO2 and TiO2 films. Complementary techniques (XPS, HRTEM and AFM) have been used for assessment of realistic optical models.

Paper Details

Date Published: 4 November 1994
PDF: 10 pages
Proc. SPIE 2253, Optical Interference Coatings, (4 November 1994); doi: 10.1117/12.192074
Show Author Affiliations
Josette Rivory, Univ. Pierre et M. Curie (France)
S. Fisson, Univ. Pierre et M. Curie (France)
Jean Marc Frigerio, Univ. Pierre et M. Curie (France)
V. Nguyen Van, Univ. Pierre et M. Curie (France)
G. Vuye, Univ. Pierre et M. Curie (France)
Yangshu Wang, Univ. Pierre et M. Curie (France)
Florin Abeles, Univ. Pierre et M. Curie (France)

Published in SPIE Proceedings Vol. 2253:
Optical Interference Coatings
Florin Abeles, Editor(s)

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