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Proceedings Paper

Optical diagnostics of quaternary narrow-gap semiconductors
Author(s): Georgiy G. Tarasov; Yuri I. Mazur; Jens Wolfgang Tomm; S. I. Kriven; S. R. Lavorik; N. V. Shevchenko
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Paper Abstract

Optical diagnostics of HgCdMnTe, HgCdMnSe narrow-gap semiconductors have been performed by means of FIR vibrational spectroscopy and IR luminescence for the case of low manganese content. Primary attention is given to the spectral features attributed to structural disordering or defects presence both in perfect and in real crystalline structures of HgCdTe(Se).

Paper Details

Date Published: 31 October 1994
PDF: 10 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191988
Show Author Affiliations
Georgiy G. Tarasov, Institute of Semiconductor Physics (Ukraine)
Yuri I. Mazur, Institute of Semiconductor Physics (Ukraine)
Jens Wolfgang Tomm, Humboldt Univ. (Germany)
S. I. Kriven, Institute of Semiconductor Physics (Ukraine)
S. R. Lavorik, Institute of Semiconductor Physics (Ukraine)
N. V. Shevchenko, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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