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Proceedings Paper

Express method for optical strength diagnostics in transparent dielectrics and semiconductors
Author(s): Nadezhda E. Korsunskaya; Nicolai R. Kulish; Grigory S. Pekar; Aleksandr F. Singaevsky
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Paper Abstract

The monopulse method for rapidly determining the threshold energy Eth and threshold power density Jth of optical destruction in optically transparent dielectrics and semiconductors is developed. This method of diagnostics is based on measuring the optical transmission and electrical conductivity of the specimen under irradiation by laser pulses. The advantages of such diagnostics over the previously developed multi-pulsed methods are analyzed. As an example, the use of the method proposed for CdS single crystals, among them the crystals with uniquely high optical strength (Jth equals 600 - 800 MW/cm2), is described.

Paper Details

Date Published: 31 October 1994
PDF: 5 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191984
Show Author Affiliations
Nadezhda E. Korsunskaya, Institute of Semiconductor Physics (Ukraine)
Nicolai R. Kulish, Institute of Semiconductor Physics (Ukraine)
Grigory S. Pekar, Institute of Semiconductor Physics (Ukraine)
Aleksandr F. Singaevsky, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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