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Proceedings Paper

Photoluminescence characterization of silicon subjected to various industrial treatments
Author(s): Mikhail Ya. Valakh; Galina Yu. Rudko; N. I. Shakhraychuk
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Paper Abstract

Photoluminescence investigations of silicon subjected to such industrial treatments as implantation, high temperature postimplantation annealing, treatment in high frequency discharge plasma, as well as the prolonged thermal annealing with the formation of thermal donors were carried out. It was shown that photoluminescence can be used for direct observation of the implanted impurity activation under various postimplantation treatments. Photoluminescence also proved to be useful for indirect control of thermal donors generation in Si:Ge.

Paper Details

Date Published: 31 October 1994
PDF: 7 pages
Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); doi: 10.1117/12.191971
Show Author Affiliations
Mikhail Ya. Valakh, Institute of Semiconductor Physics (Ukraine)
Galina Yu. Rudko, Institute of Semiconductor Physics (Ukraine)
N. I. Shakhraychuk, Institute of Semiconductor Physics (Ukraine)

Published in SPIE Proceedings Vol. 2113:
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics
Sergei V. Svechnikov; Mikhail Ya. Valakh, Editor(s)

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