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Proceedings Paper

Poly(cyclohexyl 2-cyanoacrylate-co-ethoxyethyl 2-cyanoacrylate) as a positive-tone electron beam resist for phase-shift mask fabrication
Author(s): Akira Tamura; Masaji Yonezawa; Mitsuyoshi Sato; T. Okuyama
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Paper Abstract

Poly(cyclohexyl 2-cyanoacrylate) (PCHCA), a positive tone electron beam resist, has both high sensitivity and high dry-etching durability. Therefore, PCHCA has been successfully used for the fabrication of conventional chromium photomasks using dry-etching. However, when PCHCA was applied to the phase-shift mask fabrication, cracks were observed in resist patterns on the SiO2 shifter layer. The cyclic-alkyl group of PCHCA enhances dry-etching durability but causes the cracks in resist patterns. On the other hand, the noncyclic group prevent cracks, but reduces dry-etching durability. However, the copolymer of cyclohexyl 2- cyanoacrylate and ethoxyethyl 2-cyanoacrylate was delineated on SiO2 without generating cracks and reducing dry-etching durability, with high sensitivity. Using this copolymer, the phase-shift masks having SiO2 shifters with vertical walls were fabricated by dry-etching process in short time.

Paper Details

Date Published: 3 November 1994
PDF: 9 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994);
Show Author Affiliations
Akira Tamura, Toppan Printing Co., Ltd. (Japan)
Masaji Yonezawa, Toppan Printing Co., Ltd. (Japan)
Mitsuyoshi Sato, Toagosei Chemical Industry Co., Ltd. (Japan)
T. Okuyama, Toagosei Chemical Industry Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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