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Proceedings Paper

Silicon shaping mask for electron-beam cell projection lithography
Author(s): Hidetoshi Satoh; Yoshinori Nakayama; Norio Saitou; T. Kagami
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Paper Abstract

A novel silicon shaping mask for electron-beam cell projection lithography has been developed for use in the HL-800D system, a high-throughput electron-beam direct writing system for ULSI device fabrication. This shaping mask has 125 shaping apertures corresponding to the ULSI's cell patterns and 25 square apertures for the conventional VSB method. In fabricating of the shaping masks, advanced ULSI processes are applied. In particular, an SOI wafer contributes to mask thickness uniformity and low-temperature etching with microwave plasma enables the side wall angle to be perpendicular. The fabrication errors for each aperture size are less than 0.25 micrometers . Consequently, the beam size errors on the wafer are less than 0.01 micrometers due to the 1/25 reduction ratio of the HL-800D system. By using the HL-800D cell projection, ULSI patterns corresponding to a 256-Mb DRAM gate level were exposed. As this experimental results, the average value for patterns designed to be 0.20 micrometers is 0.197 micrometers with a standard deviation of 0.013 micrometers .

Paper Details

Date Published: 3 November 1994
PDF: 11 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191922
Show Author Affiliations
Hidetoshi Satoh, Hitachi, Ltd. (Japan)
Yoshinori Nakayama, Hitachi, Ltd. (Japan)
Norio Saitou, Hitachi, Ltd. (Japan)
T. Kagami, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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