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Proceedings Paper

SR irradiation stability of x-ray mask
Author(s): Yoshio Yamashita; Hiroshi Okuyama; Kinya Ashikaga; Tomiyuki Arakawa
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Paper Abstract

In this paper we report on the evaluation of the stability of mask materials against SR (synchrotron radiation) irradiation using a SORTEC SR ring. The radiation damage to SiN and SiC mask membranes, a W-based absorber and an SiO2 antireflective coating (ARC) film was examined. In order to evaluate the irradiation damage precisely, irradiation was performed over the entire area of the membrane window or the absorber film under conditions similar to those of the pattern exposure, instead of conventional acceleration damage tests irradiating a small portion of the sample. The large stored current and long beam life (25 H at 500 mA) of the SR ring enabled these irradiation tests. SiN and SiC mask membranes and the stress-free absorber have sufficiently high radiation stability for application to practical uses. In addition, a SiO2 film coated on a SiN mask membrane acts not only as an ARC film but also as a film of reducing pattern displacement induced by the radiation damage of the membrane.

Paper Details

Date Published: 3 November 1994
PDF: 10 pages
Proc. SPIE 2254, Photomask and X-Ray Mask Technology, (3 November 1994); doi: 10.1117/12.191919
Show Author Affiliations
Yoshio Yamashita, SORTEC Corp. (Japan)
Hiroshi Okuyama, SORTEC Corp. (Japan)
Kinya Ashikaga, SORTEC Corp. (Japan)
Tomiyuki Arakawa, SORTEC Corp. (Japan)

Published in SPIE Proceedings Vol. 2254:
Photomask and X-Ray Mask Technology
Hideo Yoshihara, Editor(s)

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