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Proceedings Paper

Effects of film thickness and aluminum content on the optical and electrical properties of the polycrystalline ZnO:Al films prepared by rf planar magnetron sputtering
Author(s): Yasuhiro Igasaki
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Paper Abstract

The thickness and Al content dependence of the electrical properties and the IR absorption due to free electron, of ZnO:Al films prepared by rf magnetron sputtering was studied. As a result, it was found that the increase in the carrier concentration and the Hall mobility with increasing film thickness was ascribed to the decrement of real surface, namely the decrease in the number of chemisorbed oxygen on surface, and the spectral absorption due to the free carrier was approximately proportional to (lambda) 3.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190812
Show Author Affiliations
Yasuhiro Igasaki, Shizuoka Univ. (Japan)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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