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Proceedings Paper

Epitaxial CoSi2 film grown on Si substrate by solid interaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer
Author(s): Wei-Jun Wu; Bing-Zong Li; Kai Shao; Z. Sun; Zhi Guang Gu; Wei-Ning Huang; Guo Bao Jiang; Ping Liu; Zu Yao Zhou
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Paper Abstract

CoSi2 is being investigated intensively for microelectronics application recently. In this paper a new method of growing an epitaxial CoSi2 film by solid state reaction of Co/Ti/Si and TiN/Co/Ti/Si multilayer is described. The variation of structure and sheet resistance of the film with thermal annealing temperature and time has bee investigated. The kinetics and mechanism of the CoSi2 solid-state epitaxy are discussed.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190809
Show Author Affiliations
Wei-Jun Wu, Fudan Univ. (China)
Bing-Zong Li, Fudan Univ. (China)
Kai Shao, Fudan Univ. (China)
Z. Sun, Fudan Univ. (China)
Zhi Guang Gu, Fudan Univ. (China)
Wei-Ning Huang, Fudan Univ. (China)
Guo Bao Jiang, Fudan Univ. (China)
Ping Liu, Shanghai Institute of Metallurgy (China)
Zu Yao Zhou, Shanghai Institute of Metallurgy (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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