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Proceedings Paper

Interfacial reaction of bilayer Co/Ti with Si1-xGex epitaxially grown on Si(100)
Author(s): Wen-Jie Qi; Bing-Zong Li; Wei-Ning Huang; Zhi Guang Gu; Hong Quiang Lu; Xiang-Jiu Zhang; Ming Zhang; Guo-Sheng Dong
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Paper Abstract

The interfacial reaction of bilayer Co/Ti with epitaxially grown Si1-xGex layer with x equals 0.2 was investigated in this work. The multilayer films were characterized by Rutherford Backscattering Spectroscopy (RBS), Auger Electron Spectroscopy (AES), X-ray Photoelectron Spectroscopy (XPS) and X-ray Diffraction (XRD). The experimental results show the formation of a multi-layer of TiN(O)/CoSi2(Ge)/Si. A highly preferential orientation was observed for the formed CoSi2(Ge) layer. The resulted resistivity of Co/Ti/SiGe/Si after a high temperature annealing is close to that of typical CoSi2 film.

Paper Details

Date Published: 26 October 1994
PDF: 4 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190805
Show Author Affiliations
Wen-Jie Qi, Fudan Univ. (China)
Bing-Zong Li, Fudan Univ. (China)
Wei-Ning Huang, Fudan Univ. (China)
Zhi Guang Gu, Fudan Univ. (China)
Hong Quiang Lu, Fudan Univ. (China)
Xiang-Jiu Zhang, Fudan Univ. (China)
Ming Zhang, Fudan Univ. (China)
Guo-Sheng Dong, Fudan Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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