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Proceedings Paper

Interfacial deep levels in nano-crystalline silicon films
Author(s): Yayi Wei; Guozhen Zheng; Yuliang L. He
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Paper Abstract

Using highly hydrogen diluted silane as the reaction gas which was resolved with r.f. + d.c. double power sources, we have fabricated the nano-crystallite silicon (nc-Si) films. Based on the interfacial trap theory of poly-Si and revised by small size effect, we have got the relationship between conductivity of nc-Si films and defect levels in its interfacial region. Photoabsorption spectra and conductivity of nc-Si have been measured at low temperatures from 4.2 K to 77 K. According to theoretical analyses and experimental results, we suggest that the temperature behavior of the conductivity of nc-Si film is exponential at low temperature; the defect levels which are induced by interfaces are deep levels. Photoconduction experiments show that the carrier lifetime of nc-Si is as high as 10 ms, and the trap effects are very strong.

Paper Details

Date Published: 26 October 1994
PDF: 3 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190784
Show Author Affiliations
Yayi Wei, National Lab. for Infrared Physics (China)
Guozhen Zheng, National Lab. for Infrared Physics (China)
Yuliang L. He, Beijing Univ. of Aeronautics (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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