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Proceedings Paper

Heterojunction Fe:InP/InGaAs Schottky and MESFETs grown by MOCVD
Author(s): S. C. Shei; Yan-Kuin Su; C. J. Hwang; Meiso Yokoyama
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Paper Abstract

Novel lattice-matched Fe:InP/InGaAs heterostructure MESFETs have been grown by metalorganic chemical vapor deposition (MOCVD). The resistivity of epitaxially grown Fe:InP layer typically exceeded 3 X 108 (Omega) cm. High transconductance of 140 mS/mm is obtained for a 1-micrometers gate length MESFET fabricated by depositing the gate metallization directly on the semi-insulating Fe:InP layer. High-frequency S-parameter measurements of microwave characteristics indicated a projected maximum frequency of oscillation fmax equals 18 GHz but transducer gain cutoff occurred at approximately 7.3 GHz because of impedance mismatch and package parasitic. The planar semi- insulating Fe:InP layer enhances the Schottky barrier height and results in devices with excellent performances.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190774
Show Author Affiliations
S. C. Shei, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
C. J. Hwang, National Cheng Kung Univ. (Taiwan)
Meiso Yokoyama, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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