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Proceedings Paper

High-quality InP epitaxial layers grown by metal-organic chemical vapor deposition using tertiarybutylphosphine (TBP) source
Author(s): H. Kuan; Yan-Kuin Su; W. J. Tzou
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Paper Abstract

One organophosphrous compound, tertiarybutylphosphine has been investigated for their possible use as precursors in the metalorganic chemical vapor deposition (MOCVD). This material is less pyrophoric and less toxic than phosphine, the compound has used to grow epitaxial layers of InP on semi-insulating InP substrate using trimethylindium (TMIn) in a flowing hydrogen ambient. High quality InP epilayer have been successfully grown and specular surface was obtained at growth temperature 600 degree(s)C and x-ray was used to measure the lattice mismatch (Delta) a/a. The highest quality InP epilayer, which was grown at a V/III ratio of 60 and a growth pressure of 250 Torr, the highest n-type electron Hall mobility were 4500 cm2/Vs with the electron concentration of 3.4 X 1015 cm-3 at 300 K and 18260 cm2/Vs with the electron concentration of 2.8 X 1015 cm-3 at 77 K. The low temperature (10 K) photoluminescence optical properties measurements show intense near bandgap emission with a full width half maximum (FWHM) is about 8 meV.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190773
Show Author Affiliations
H. Kuan, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
W. J. Tzou, National Cheng Kung Univ. (Taiwan)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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