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Proceedings Paper

Zr-ion bombardment effect on ZrO2/Zircaloy-4 system
Author(s): Jun Bao; Chunlai Ma; Xinde Bai; Heming Chen; Fen Liu; Yeng Chen
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Paper Abstract

The ZrO2/Zircaloy-4 systems before and after Zr+ bombardment at low temperature have been studied by use of Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). It is shown that 100-keV Zr+ bombardment of ZrO2/Zr-4 system at low temperature leads to significant changes of compositional distribution in depth, and meanwhile, results in the alteration of oxide film thickness. Such results may be governed by these factors, such as bombardment conditions, the thickness of ZrO2 films before bombardment, the amount of surface chemisorption oxygen Oad bombarded into matrix due to collision, and the overlapping extent between oxide film and bombardment damage areas and so on. It is shown that Zr+ bombardment enhances oxygen diffusion towards matrix significantly, interface mixing is also observed. XPS is used to determine both compositional and valerice states changes.

Paper Details

Date Published: 26 October 1994
PDF: 6 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190762
Show Author Affiliations
Jun Bao, Qinghua Univ. (China)
Chunlai Ma, Qinghua Univ. (China)
Xinde Bai, Qinghua Univ. (China)
Heming Chen, Qinghua Univ. (China)
Fen Liu, Beijing Ctr. of Physical and Chemical Analysis (China)
Yeng Chen, Beijing Ctr. of Physical and Chemical Analysis (China)


Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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