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Proceedings Paper

Growth and characterization of boron delta function shaped doping layer in silicon by molecular beam epitaxy
Author(s): X. J. Chen; Q. H. Wang; D. W. Gong; Y. Yang; Hong Quiang Lu; Fang Lu; Y. L. Fan; Xue Kun Lu; Z. M. Jiang; Xiang-Jiu Zhang; Xun Wang
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Paper Abstract

We have successfully realized boron (delta) -function-shaped doping in the silicon epilayer by molecular beam epitaxy (MBE) with a B2O3 doping source. The sheet boron concentration N(Beta ) of the boron (delta) doping layer can exceed 3.4 X 1014 cm-2. The transmission electron microscopy (TEM) cross-section image shows the width of the (delta) doping layer is about 1.5 nm. Meanwhile, we have applied in situ Auger electron spectroscopy (AES) to quantitatively analyze the relationship of boron (delta) doping sheet concentration N(Beta ) with the (delta) doping time. With the substrate temperature of 650 degree(s)C and the doping source temperature of 900 degree(s)C, for N(Beta ) < 3.4 X 1014 cm-2 (1/2 monolayer), boron incorporation onto Si (100) is proportional to the (delta) doping time, and the sticking coefficient is 4.4 X 1013 cm-2/min; while for N(Beta ) > 3.4 X 1014 cm-2, the incorporation tends to saturate. The residual oxygen has not been detected even if N(Beta ) is up to 4.4 X 1014 cm-2.

Paper Details

Date Published: 26 October 1994
PDF: 5 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190734
Show Author Affiliations
X. J. Chen, New York Univ. (United States)
Q. H. Wang, Fudan Univ. (China)
D. W. Gong, Fudan Univ. (China)
Y. Yang, Fudan Univ. (China)
Hong Quiang Lu, Fudan Univ. (China)
Fang Lu, Fudan Univ. (China)
Y. L. Fan, Fudan Univ. (China)
Xue Kun Lu, Fudan Univ. (China)
Z. M. Jiang, Fudan Univ. (China)
Xiang-Jiu Zhang, Fudan Univ. (China)
Xun Wang, Fudan Univ. (China)

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)

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