Polycrystalline diamond films have been deposited onto Si₃N₄-coated silicon substrates using thermal chemical vapor deposition (CVD). The defects on the amorphous layer played an essential role in diamond nucleation. After the deposition, very few diamond crystallites were found on the untreated Si₃N₄ coating, while a diamond film had been formed on the ultrasonically treated Si₃N₄ coating with diamond powder. The adhesion of diamond film to Si₃N₄-coated Si substrates was stronger than that of diamond film to Si substrate and decreased as the CH₄ concentration increased. The erosion resistance of diamond film on Si₃N₄-coated Si substrate was much stronger than that of Si₃N₄ film on Si substrate.

Date Published: 26 October 1994
PDF: 1 pages
Proc. SPIE 2364, Second International Conference on Thin Film Physics and Applications, (26 October 1994); doi: 10.1117/12.190716

Published in SPIE Proceedings Vol. 2364:
Second International Conference on Thin Film Physics and Applications
Shixun Zhou; Yongling Wang; Yi-Xin Chen; Shuzheng Mao, Editor(s)