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Proceedings Paper

Preparation and photoluminescence of sol-gel-derived Ge-nanocrystals-doped SiO2 glasses
Author(s): Masayuki Nogami; Toshihiro Kasuga; Yoshihiro Abe
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Paper Abstract

Ge nanocrystal-embedded SiO2 glasses were successfully prepared by a sol-gel process. The glasses synthesized through hydrolysis of Si(OC2H5)4 and GeCl4 were heated in the presence of hydrogen at 400 to 700 degree(s)C, in which Ge4+ ions were reduced to precipitate nanosized Ge crystals. Glasses doped with Ge nanocrystals of a diameter of approximately 5 nm showed the optical absorption edge at approximately 2.5 eV and a strong room temperature photoluminescence with peaks at 2.35, 2.15 eV and weak at 1.85 eV. Large Ge crystals precipitated by heating above 800 degree(s)C showed no photoluminescence.

Paper Details

Date Published: 13 October 1994
PDF: 7 pages
Proc. SPIE 2288, Sol-Gel Optics III, (13 October 1994); doi: 10.1117/12.188951
Show Author Affiliations
Masayuki Nogami, Nagoya Institute of Technology (Japan)
Toshihiro Kasuga, Nagoya Institute of Technology (Japan)
Yoshihiro Abe, Nagoya Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 2288:
Sol-Gel Optics III
John D. Mackenzie, Editor(s)

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