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Proceedings Paper

Effect of visible and near-infrared illumination on the mid-infrared transmission of silicon and germanium
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Paper Abstract

Germanium and silicon optical transmissive components are widely used in infrared lenses, filter substrates, etc. We demonstrate that severe loss can be induced in some germanium samples by illumination in the visible or near infrared with power densities in the region of watts per square centimeter. The absorption arises from light hole to heavy hole inter valence band transitions. The strength of the absorption induced depends on a number of parameters not normally controlled in optical applications, such as minority carrier lifetime and surface recombination velocity. The effect is very much weaker in silicon.

Paper Details

Date Published: 28 September 1994
PDF: 8 pages
Proc. SPIE 2286, Window and Dome Technologies and Materials IV, (28 September 1994); doi: 10.1117/12.187332
Show Author Affiliations
Harvey Nicholas Rutt, Univ. of Southampton (United Kingdom)

Published in SPIE Proceedings Vol. 2286:
Window and Dome Technologies and Materials IV
Paul Klocek, Editor(s)

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