The purpose of this work was to reduce isolation oxide defect density and improve gate oxide integrity by modification of wet oxide strip and pre-diffusion clean. Work was done on 1.0 micrometers and 0.8 micrometers M²CMOS twin-well technology. Twin-wells are defined by local oxidation process using nitride layer. Active area is also defined by local oxidation. MOS gate is built of POCl₃ doped polysilicon on top of 185A oxide.

Date Published: 14 September 1994
PDF: 7 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186745

Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)