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Proceedings Paper

In-line monitoring of thin oxide on production wafers using large scribe line capacitors
Author(s): Luca Perego; Martin Duncan
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Paper Abstract

In order to guarantee oxide quality for non-volatile memory devices, it is important to be able to monitor defectivity at end-of-line parameter testing. This is the only place where we can screen out the intermediate defectivity which electrical testing cannot detect on all wafers processed. The traditional reliability monitors cannot address this application due to their small sample size, long test time and high cost. In this work, an end-of-line monitor using four scribe line capacitors is proposed. Two gate oxide and two interpoly dielectric structures can be easily measured at parameter testing. Both protected and unprotected capacitors are used to separate out charging effects. These structures can be measured in line after gate definition and can be used to supplement standard gate oxide monitors (GOMs). Using this approach we can quickly detect and correct any deviations in the process that determine oxide quality.

Paper Details

Date Published: 14 September 1994
PDF: 10 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186743
Show Author Affiliations
Luca Perego, SGS-Thomson Microelectronics (Italy)
Martin Duncan, SGS-Thomson Microelectronics (Italy)

Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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