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Proceedings Paper

Effects of resist strip processing damage on the electrical characteristics of 0.8-um a-Si antifuse circuit elements
Author(s): Felix Fujishiro; Landon B. Vines; K. S. Ravindhran; Yu-Pin Han; Danny Echtle; Annette Garcia; Brian Richardson; Milind Weling; James Hickey; Ying-Tsong Loh
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Paper Abstract

Field-programmable ASICs have been implemented using a variety of programmable circuit elements, including SRAM, EPROM, E2PROM, and antifuse cells. Amorphous silicon (a-Si) antifuse cells offer greater packing densities and superior performance compared to cells based on memory elements, and they can be integrated into conventional multi-layer integrated circuits with the addition of several process modules. Despite their advantages, a potential yield issue with a-Si antifuses is that their electrical characteristics can be affected by damage from manufacturing processes. In this study, it is found that the programming voltage is reduced when a solvent-based post-resist strip solution is applied to the bottom electrode layer of TiW. Atomic-force microscopy (AFM) shows that the resist strip solution increases the micro-roughness of TiW films. It is also found that the `off-'state leakage current increases when the solution is applied to the a-Si antifuse layer. The amount of the leakage current increase is related to the amount of a-Si loss due to the strip solution.

Paper Details

Date Published: 14 September 1994
PDF: 9 pages
Proc. SPIE 2334, Microelectronics Manufacturability, Yield, and Reliability, (14 September 1994); doi: 10.1117/12.186738
Show Author Affiliations
Felix Fujishiro, VLSI Technology, Inc. (United States)
Landon B. Vines, VLSI Technology, Inc. (United States)
K. S. Ravindhran, VLSI Technology, Inc. (United States)
Yu-Pin Han, VLSI Technology, Inc. (United States)
Danny Echtle, VLSI Technology, Inc. (United States)
Annette Garcia, VLSI Technology, Inc. (United States)
Brian Richardson, VLSI Technology, Inc. (United States)
Milind Weling, VLSI Technology, Inc. (United States)
James Hickey, VLSI Technology, Inc. (United States)
Ying-Tsong Loh, VLSI Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 2334:
Microelectronics Manufacturability, Yield, and Reliability
Barbara Vasquez; Hisao Kawasaki, Editor(s)

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