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Proceedings Paper

Photocurrent imaging of silicon wafers using electrolyte contacts
Author(s): Thomas Falter; Dietmar Hellmann; Peter Eichinger
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Paper Abstract

The photocurrent response of Silicon wafers scanned by laser beams of variable wavelength and intensity is evaluated to assess process-induced defects in their lateral and in-depth distribution, as well as in their chemical nature. Large-area transparent contacts to bare wafers, for current collection and surface passivation, are made by electrolyte chambers (ELYMAT principle). The application of the analytical technique is discussed for a variety of process development tasks, among them evaluation of quartz quality impact on bulk minority carrier lifetime and surface-near defect formation, intrinsic gettering and DZ characterization, as well as oxide interface quality.

Paper Details

Date Published: 14 September 1994
PDF: 8 pages
Proc. SPIE 2337, Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing, (14 September 1994); doi: 10.1117/12.186635
Show Author Affiliations
Thomas Falter, Fraunhofer Institute for Integrated Circuits (Germany)
Dietmar Hellmann, Heraeus Quarzglas GmbH (Germany)
Peter Eichinger, Gesellschaft fuer Messtechnik und Technologie GmbH (Germany)

Published in SPIE Proceedings Vol. 2337:
Optical Characterization Techniques for High-Performance Microelectronic Device Manufacturing
Jagdish P. Mathur; John K. Lowell; Ray T. Chen, Editor(s)

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