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Proceedings Paper

Surface charging effect on microloading for sub-quarter-micron contact etching
Author(s): Ki-Soo Shin; Hae-Sung Park; Soo-Han Choi
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Paper Abstract

Surface charging effect on microloading has been observed using both undoped and doped polysilicon hard mask for sub-quarter-micron contact etching in a MERIE. Surface charging on the undoped polysilicon mask due to non-uniform plasma has caused severe microloading. However, doped polysilicon mask has been very effective to suppress microloading effect up to 0.1 micrometers , because no charge builds up on the surface of the mask. In case of undoped polysilicon mask, both surface charging and microloading effect could be reduced by either decreasing B-field or increasing pressure and gas flow, which improves plasma uniformity.

Paper Details

Date Published: 9 September 1994
PDF: 11 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186074
Show Author Affiliations
Ki-Soo Shin, Hyundai Electronics Industries Co., Ltd. (South Korea)
Hae-Sung Park, Hyundai Electronics Industries Co., Ltd. (South Korea)
Soo-Han Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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