Proceedings Paper
New route to thermal dry-etching of copper using hydrogen peroside (H2O2) and hexafluoroacetylacetone (HFACH)| Format | Member Price | Non-Member Price |
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Paper Abstract
Here we report a new thermal dry etch process for copper using hydrogen peroxide (H2O2) and hexafluoroacetylacetone (hfacH). The H2O2 oxidizes copper to form either copper(I)oxide or copper(II)oxide depending on the etch temperature followed by removal of the copper oxide by hfacH resulting in formation of volatile copper(bis- hexafluoroacetylacetonate) [Cu(hfac)2] etch species and water. Copper has been successfully etched by this process at temperatures as low as 150 degree(s)C and etch rates of up to approximately micrometers /min at 190 degree(s)C.
Paper Details
Date Published: 9 September 1994
PDF: 6 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186073
Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)
PDF: 6 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186073
Show Author Affiliations
Ajay Jain, Univ. of New Mexico (United States)
Toivo T. Kodas, Univ. of New Mexico (United States)
Toivo T. Kodas, Univ. of New Mexico (United States)
Mark J. Hampden-Smith, Univ. of New Mexico (United States)
Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)
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