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Proceedings Paper

Crystal-free and low-flow-angle ILD by using in situ SACVD/PE BPSG for 0.5-um application
Author(s): Hung-Chi Yen; Ben-Yih Jin; Cliff Wong; Peter Chow; Daniel Yen; Joseph Hu; Joe S. Su; Jean Wang
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Paper Abstract

As the technology pushes down to half-micron or below, a low flow angle BPSG film for pre- metal dielectric (PMD) becomes necessary. With high BP concentration BPSG, for example 4 X 6, low flow angle can be achieved after proper reflow. The drawback is that, frequently, BPSG crystal appears at smaller poly spacing. The combined sub-atmosphere chemical vapor deposition (SACVD) and BPSG films through in-situ deposition in applied materials P-5000D system was implemented to not only improve reflow angle but also suppress the crystal formation at any poly space. A crystal-free with 11 degree(s) flow angle PMD was achieved by using 4KA SACVD and 5KA BPSG over 6000A poly lines. A detailed SACVD/BPSG process and the comparison of BPSG reflow characterization with and without SACVD are presented.

Paper Details

Date Published: 9 September 1994
PDF: 9 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186062
Show Author Affiliations
Hung-Chi Yen, Macronix International Corp. (Taiwan)
Ben-Yih Jin, Macronix International Corp. (Taiwan)
Cliff Wong, Macronix International Corp. (Taiwan)
Peter Chow, Macronix International Corp. (Taiwan)
Daniel Yen, Macronix International Corp. (Taiwan)
Joseph Hu, Applied Materials Taiwan (Taiwan)
Joe S. Su, Applied Materials Taiwan (Taiwan)
Jean Wang, Applied Materials Taiwan (Taiwan)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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