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Proceedings Paper

New hot-carrier-resistant P-I-N MOSFET structure
Author(s): Le-Tien Jung; Indrajit Manna; Swapan Bhattacharya; Sanjay K. Banerjee
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Paper Abstract

A new P-I-N MOSFET structure has been developed with near-intrinsic doping (1015 - 1016 cm-3 in our case) in the channel near the source/drain regions. The new structure is more effective in reducing the peak electric field at the channel/drain junction than LDD structures, and hence results in better hot carrier suppression. Also, the near intrinsic region near the drain reduces the transverse electric field and gives rise to higher carrier mobility and drive current than LDD devices.

Paper Details

Date Published: 9 September 1994
PDF: 4 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186061
Show Author Affiliations
Le-Tien Jung, Univ. of Texas/Austin (United States)
Indrajit Manna, Univ. of Texas/Austin (Singapore)
Swapan Bhattacharya, Univ. of Texas/Austin (United States)
Sanjay K. Banerjee, Univ. of Texas/Austin (United States)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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