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Proceedings Paper

Analytic models and parametric investigations of IBE and RIE mechanisms for GaAs compounds
Author(s): K. Ketata; Serge Koumetz; Mohamed Ketata; Roland Debrie
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Paper Abstract

This work introduces a comprehensive analytic model of the sputtering mechanism present in ion beam etching and reactive ion etching processes. Our final objective is to correlate the etch rate to the plasma reactor parameters. Experimental verifications for GaAs etching show a good agreement for ion beam etching. In the case of reactive ion etching, the imperfect agreement is explained by the influence of effects such as flow rate and temperature not taken into account in the theoretical approach. We also present parametric investigations of GaAs etched in SiCl4 plasma.

Paper Details

Date Published: 9 September 1994
PDF: 9 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186057
Show Author Affiliations
K. Ketata, LICA/INSA de Rouen (France)
Serge Koumetz, LICA/INSA de Rouen (France)
Mohamed Ketata, LICA/INSA de Rouen (France)
Roland Debrie, LICA/INSA de Rouen (France)


Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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