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Proceedings Paper

Laser-induced microfracture leading to high-density metal-to-metal connections
Author(s): Joseph B. Bernstein; Thomas M. Ventura; Aaron T. Radomski
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Paper Abstract

Laser programmed inter-level metal connections have been developed as a means to achieve high density linking for customization in programmable gate arrays and for additive redundancy in restructurable integrated circuits. This work reports on the linking of 4 X 4 micrometers crossings of standard two-level metal interconnect lines and subsequent microstructural analyses aimed at understanding the mechanism of link formation. The links were formed by focusing a laser on metal 1 through an annular region of metal 2. The mechanism of link formation appears to be a physical connection made by a fracture of the inter-level dielectric (ILD) layer due to the stress of thermal expansion of the metallization with molten metal 2 filling the crack. Focussed ion-beam (FIB) cross sectional micrography and finite element analysis (FEA) have allowed us to analyze the successfully formed links as well as the failures to link. As a result of our analysis, we have begun to understand how to optimize the device geometry for very high reliability laser linking.

Paper Details

Date Published: 9 September 1994
PDF: 12 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186055
Show Author Affiliations
Joseph B. Bernstein, MIT Lincoln Lab. (United States)
Thomas M. Ventura, MIT Lincoln Lab. (United States)
Aaron T. Radomski, Dept. of Defense (United States)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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