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Proceedings Paper

Planarization using chemical mechanical planarization (CMP) on a 16-megabit SRAM with quadruple polysilicon stacks
Author(s): Kathleen A. Perry; Sandya Radhakrishna; Craig Lage; Franklin Nkansah; Victor Pol; Thom Kobayashi; Jeff P. West; Phil Crabtree
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Paper Abstract

Chemical mechanical planarization (CMP) has been used to fabricate a 0.35 micrometers 16 Meg SRAM with quadruple polysilicon stacks. The use of CMP results in complete planarization of over one micron of topography. CMP planarization results in improved photolithography depth of field when compared to standard resist etchback planarization (REB). Data from a lot processed using CMP at contact dielectric and interlayer dielectric is compared to a lot that was processed using standard REB for planarization.

Paper Details

Date Published: 9 September 1994
PDF: 9 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186054
Show Author Affiliations
Kathleen A. Perry, Motorola (United States)
Sandya Radhakrishna, Motorola (United States)
Craig Lage, Motorola (United States)
Franklin Nkansah, Motorola (United States)
Victor Pol, Motorola (United States)
Thom Kobayashi, Motorola (United States)
Jeff P. West, Motorola (United States)
Phil Crabtree, Motorola (United States)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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