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Proceedings Paper

Planar multilevel metallization technologies for ULSI devices
Author(s): Zheng Xu; Ken Ngan; Jim VanGogh; Rod Mosely; Yoichiro Tanaka; H. Kieu; Fusen E. Chen; Ivo J. Raaijmakers
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Paper Abstract

Technologies are described which can completely fill contacts, vias and trenches with a PVD or CVD barrier metal film and a PVD Al-Cu plug. The presented processes are demonstrated to be applicable for contacts or vias having sizes down to 0.25 micrometers and aspect ratios of up to 5.

Paper Details

Date Published: 9 September 1994
PDF: 10 pages
Proc. SPIE 2335, Microelectronics Technology and Process Integration, (9 September 1994); doi: 10.1117/12.186046
Show Author Affiliations
Zheng Xu, Applied Materials, Inc. (United States)
Ken Ngan, Applied Materials, Inc. (United States)
Jim VanGogh, Applied Materials, Inc. (United States)
Rod Mosely, Applied Materials, Inc. (United States)
Yoichiro Tanaka, Applied Materials, Inc. (United States)
H. Kieu, Applied Materials, Inc. (United States)
Fusen E. Chen, Applied Material (United States)
Ivo J. Raaijmakers, Applied Materials, Inc. (United States)

Published in SPIE Proceedings Vol. 2335:
Microelectronics Technology and Process Integration
Fusen E. Chen; Shyam P. Murarka, Editor(s)

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