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Proceedings Paper

Reactively sputtered thermochromic tungsten doped VO2 films
Author(s): M. Abdus Sobhan; R. T. Kivaisi; B. A. Stjerna; Claes-Goeran Granqvist
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Paper Abstract

Tungsten-doped vanadium oxide (V1-xWxO2) films were prepared by concurrent reactive dc magnetron sputtering of vanadium and tungsten in an Ar + O2 plasma with a controlled oxygen partial pressure. Films were deposited onto glass substrates at 400 degree(s)C. The films had a metal-semiconductor transition at a temperature (tau) t that was depressed when x was increased. Rutherford Back Scattering was used to determine x. X- ray diffraction was employed to confirm the monoclinic low-temperature VO2 phase. The relation between x and (tau) t was studied and compared with results from the literature. It was shown that (tau) t could be set to a value between 17 and 65 degree(s)C by proper choice of x. The optical and electrical properties of the films were investigated around the metal-semiconductor phase transition. The luminous transmittance was rather unaffected by the temperature, whereas the near infrared transmittance showed lower values above (tau) t. The degree of thermochromic modulation decreased for increased x. Electrical measurements showed that the ratio of the resistance above and below (tau) t decreased with increasing x.

Paper Details

Date Published: 9 September 1994
PDF: 12 pages
Proc. SPIE 2255, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII, (9 September 1994); doi: 10.1117/12.185385
Show Author Affiliations
M. Abdus Sobhan, Uppsala Univ. (Sweden)
R. T. Kivaisi, Uppsala Univ. (Sweden)
B. A. Stjerna, Uppsala Univ. (Sweden)
Claes-Goeran Granqvist, Uppsala Univ. (Sweden)

Published in SPIE Proceedings Vol. 2255:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XIII
Volker Wittwer; Claes G. Granqvist; Carl M. Lampert, Editor(s)

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