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Proceedings Paper

Creation of heterojunctions in Hg1-xCdxTe (x approximately equal to 0.2) by laser annealing without melting
Author(s): Eugen Sheregii; Marian Kuzma; C. Abeynayake; Maegorzata M. Pociask
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Paper Abstract

A high photo-sensitive area has been created in solid solution of Hg1-xCdxTe (x approximately equals 0.2) (MCT) without melting its surface. That idea of formation of heterojunction, which was indicated by computer modelling of mass transportation processes under laser treatment of MCT, is realized experimentally. MCT samples were irradiated with a Nd:YAG laser beam having an energy density 0.7 J/cm2. The presence of a heterojunction not far below the upper surface has been verified by X-ray microanalysis.

Paper Details

Date Published: 7 September 1994
PDF: 4 pages
Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184789
Show Author Affiliations
Eugen Sheregii, Pedagogical Univ. (Poland)
Marian Kuzma, Pedagogical Univ. (Poland)
C. Abeynayake, Pedagogical Univ. (Poland)
Maegorzata M. Pociask, Pedagogical Univ. (Poland)

Published in SPIE Proceedings Vol. 2207:
Laser Materials Processing: Industrial and Microelectronics Applications
Eckhard Beyer; Maichi Cantello; Aldo V. La Rocca; Lucien Diego Laude; Flemming O. Olsen; Gerd Sepold, Editor(s)

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