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Proceedings Paper

Laser deposition of GaAs thin films
Author(s): Vladimir N. Burimov; Valerie L. Popkov; Alexander N. Zherikhin
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Paper Abstract

The GaAs thin films were obtained by laser ablation technique. GaAs target and KrF excimer laser radiation ((lambda) equals 248 nm, E equals 0.3 J) were used. We excluded the drops, generated during the target sputtering, due to using special equipment. The deposition temperature was varied from 150 up to 450 degree(s)C. The x-ray analysis have showed that films have a monocrystalline structure at some temperatures. The interface thickness was tested by Auger method. These measurements showed that interface thickness is less than 5 nm. Using this laser ablation technique we have produced the p-n junction.

Paper Details

Date Published: 7 September 1994
PDF: 3 pages
Proc. SPIE 2207, Laser Materials Processing: Industrial and Microelectronics Applications, (7 September 1994); doi: 10.1117/12.184784
Show Author Affiliations
Vladimir N. Burimov, NICTL RAN (Russia)
Valerie L. Popkov, NICTL RAN (Russia)
Alexander N. Zherikhin, NICTL RAN (Russia)

Published in SPIE Proceedings Vol. 2207:
Laser Materials Processing: Industrial and Microelectronics Applications
Eckhard Beyer; Maichi Cantello; Aldo V. La Rocca; Lucien Diego Laude; Flemming O. Olsen; Gerd Sepold, Editor(s)

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