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Proceedings Paper

Application of laser-induced microwave photoconductivity in diagnostics of semiconductor surface layers
Author(s): Alexander A. Manenkov; Sergei Yurievich Sokolov; Sergei Yu. Popov
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Paper Abstract

The potentials of laser-induced microwave photoconductivity (LMP) as a diagnostic method for semiconductor surface studies are considered in this paper. The principals and practical realization aspects including a block-diagram and technical characteristics of the LMP apparatus, and some experimental data on electron-recombination properties of Si and GaAs surfaces are presented. The data include investigation of non equilibrium carrier relaxation channels and rates, influence of various defects (traps, adhesion centers, dislocations etc.), and spatial variations of these relaxation characteristics in surface layers modified with different procedures (ion implantation, laser annealing, mechanical treatment). Among the remote action of surface modification and interaction of locally modified zones. These effects are shown to be very important in the physics and technology of semiconductor surface modification. It is concluded that the LMP method is very informative diagnostic tool for testing and studying of semiconductor surfaces and device structures used in microelectronics, power electronics and optoelectronics.

Paper Details

Date Published: 10 August 1994
PDF: 16 pages
Proc. SPIE 2097, Laser Applications, (10 August 1994); doi: 10.1117/12.183145
Show Author Affiliations
Alexander A. Manenkov, General Physics Institute (Russia)
Sergei Yurievich Sokolov, General Physics Institute (Russia)
Sergei Yu. Popov, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 2097:
Laser Applications
Artur A. Mak, Editor(s)

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